Publicação: Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
Carregando...
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Trabalho apresentado em evento
Direito de acesso
Resumo
In this work, a simple methodology is proposed to simulate the current mirror circuit based on the triple-gate SOI FinFET experimental data, called lookup table in Verilog-A. It was analyzed the reliability of the model, comparing between experimental and simulated data, with has proven to be reliable. It was also evaluated the performance of the transistor and as well the circuit regarding the efficiency and the gain, for p- and n-types, based on three different fin widths, before and after proton-irradiation.
Descrição
Palavras-chave
Idioma
Inglês
Como citar
ECS Transactions, v. 97, n. 5, p. 171-177, 2020.
