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dc.contributor.authorBueno, Cristina de Freitas [UNESP]
dc.contributor.authorOliveira Machado, Diego Henrique de [UNESP]
dc.contributor.authorPineiz, Tatiane de Fatima [UNESP]
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.date.accessioned2014-12-03T13:11:45Z
dc.date.available2014-12-03T13:11:45Z
dc.date.issued2013-07-01
dc.identifierhttp://dx.doi.org/10.1590/S1516-14392013005000060
dc.identifier.citationMaterials Research-ibero-american Journal Of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 16, n. 4, p. 831-838, 2013.
dc.identifier.issn1516-1439
dc.identifier.urihttp://hdl.handle.net/11449/113513
dc.description.abstractRare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+) or blue (Ce3+). The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs), or an ultraviolet light absorber sink (top RE-doped SnO2). The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG) behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition.en
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent831-838
dc.language.isoeng
dc.publisherUniv Fed Sao Carlos, Dept Engenharia Materials
dc.relation.ispartofMaterials Research-ibero-american Journal of Materials
dc.sourceWeb of Science
dc.subjecttin dioxideen
dc.subjectgallium arsenideen
dc.subjectheterojunctionen
dc.subjectinterfaceen
dc.subjectelectrical conductivityen
dc.titlePhoto-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2en
dc.typeArtigo
dcterms.rightsHolderUniv Fed Sao Carlos, Dept Engenharia Materials
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.description.affiliationSao Paulo State Univ UNESP, Dept Phys, Sch Sci, Bauru, SP, Brazil
dc.description.affiliationSao Paulo State Univ UNESP, Meteorol Res Inst, Bauru, SP, Brazil
dc.description.affiliationUnespSao Paulo State Univ UNESP, Dept Phys, Sch Sci, Bauru, SP, Brazil
dc.description.affiliationUnespSao Paulo State Univ UNESP, Meteorol Res Inst, Bauru, SP, Brazil
dc.identifier.doi10.1590/S1516-14392013005000060
dc.identifier.scieloS1516-14392013005000060
dc.identifier.wosWOS:000322727600019
dc.rights.accessRightsAcesso aberto
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
dc.identifier.fileS1516-14392013000400019.pdf
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
unesp.author.lattes7730719476451232[5]
unesp.author.orcid0000-0001-5762-6424[5]
dc.relation.ispartofjcr1.103
dc.relation.ispartofsjr0,398
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