Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
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Data
2016-10-01
Autores
Oliveira, Alberto V. de
Simoen, Eddy
Mitard, Jerome
Agopian, Paula G. D. [UNESP]
Martino, Joao Antonio
Langer, Robert
Witters, Liesbeth
Collaert, Nadine
Thean, Aaron Voon-Yew
Claeys, Cor
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Ieee-inst Electrical Electronics Engineers Inc
Resumo
An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation.
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Palavras-chave
Ge pFinFET, low-frequency noise (LFN), shallow trench isolation (STI) first, STI last
Como citar
Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016.