Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
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Data
2016-01-01
Autores
Claeys, C.
Andrade, M. G. C. de [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
IEEE
Título da Revista
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Título de Volume
Editor
Ieee
Resumo
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
Descrição
Palavras-chave
random telegraph signal, time lag plot, ReRAMs, low frequency noise, interface traps, UTBB SOI, oxide traps
Como citar
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.