Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
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Data
2017-02-01
Autores
Agopian, Paula Ghedini Der [UNESP]
Martino, João Antonio
Vandooren, Anne
Rooyackers, Rita
Simoen, Eddy
Thean, Aaron
Claeys, Cor
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Resumo
In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (gD) and intrinsic voltage gain (AV). Although the Line-TFETs present worse AV than the point-TFETs, when they are compared with MOSFET technology, the line-TFET shows a much better intrinsic voltage gain than both MOSFET architectures (FinFET and GAA). Besides the AV, the highest on-state current was obtained for Line-TFETs when compared with other two TFET architectures, which leads to a good compromise for analog application.
Descrição
Palavras-chave
Different device architectures, Intrinsic voltage gain, Line-TFET
Como citar
Solid-State Electronics, v. 128, p. 43-47.