On the assessment of electrically active defects in high-mobility materials and devices
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A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
How to cite this document
Simoen, Eddy et al. On the assessment of electrically active defects in high-mobility materials and devices. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303. Available at: <http://hdl.handle.net/11449/170090>.