On the assessment of electrically active defects in high-mobility materials and devices
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2017-07-31
Autores
Simoen, Eddy
Eneman, Geert
De Oliveira, Alberto Vinicius
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
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A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.