Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic
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Data
2017-11-15
Autores
Torres, H. L.F.
Martino, J. A.
Rooyackers, R.
Vandooren, A.
Simoen, E.
Claeys, C.
Agopian, P. G.D. [UNESP]
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Resumo
This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 μm width and three different channel lengths were exposed to a 600 keV proton radiation source and their current-voltage behavior was analyzed after 1 Mrad(Si) of accumulated total dose, comparing the results obtained before and after irradiation. It was possible to notice a drain current decrease in the shorter channel devices. However, this total dose influence was not so prominent in the longer channel ones. The reasons for both phenomena is discussed based on the competition between the drain current split and the high channel resistance.
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Characterization, Proton radiation, SOI, TFET
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SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.