Improvement of gm/ID method for detection of self-heating effects
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This paper presents an improvement on the use of the transistor efficiency to verify the presence of self-heating effects using only DC measurements. Applying this improved method on FinFET devices allowed the establishment of a comparison of the self-heating effect among devices with different channel lengths, despite their different channel length modulation effects.
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Mori, C. A.B.; Agopian, P. O.D.; Martino, J. A.. Improvement of gm/ID method for detection of self-heating effects. ECS Transactions, v. 85, n. 8, p. 73-78, 2018. Available at: <http://hdl.handle.net/11449/171228>.