New method for self-heating estimation using only DC measurements
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Data
2018-05-03
Autores
Mori, C. A.B.
Agopian, P. G.D. [UNESP]
Martino, J. A.
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Resumo
This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.
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Self-heating effect, Silicon-On-Insulator, UTBB
Como citar
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, v. 2018-January, p. 1-4.