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dc.contributor.authorSilva, V. C. P.
dc.contributor.authorMartino, J. A.
dc.contributor.authorAgopian, P. G. D. [UNESP]
dc.identifier.citation2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.
dc.description.abstractIn this paper, the influence of interface charges (fixed charges and interface traps) on the subthreshold region was analyzed focusing on the fin height. This influence was analyzed from Triple gate SOI FinFETs (devices with a high silicon height - h(fin)) to Omega-Gate Nanowires (with a small h(fin)). The results shows that as the h(fin) height becomes smaller, the influence of interface charges is reduced due to the better electrostatic coupling. When the fin height becomes small enough, the interface charges did not influence both subthreshold swing and threshold voltage, even for wide devices, thanks to the supercoupling.en
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.relation.ispartof2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro)
dc.sourceWeb of Science
dc.titleInterface Charges Influence on the Subthreshold Region from Triple Gate SOI FinFET to Omega-Gate Nanowire Devicesen
dc.typeTrabalho apresentado em evento
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.description.affiliationUniv Sao Paulo, PSI, LSI, Sao Paulo, Brazil
dc.description.affiliationSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil
dc.description.affiliationUnespSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil
dc.rights.accessRightsAcesso aberto
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