DC method for self-heating estimation applied to FinFET
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Data
2018-01-01
Autores
Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
Título da Revista
ISSN da Revista
Título de Volume
Editor
Ieee
Resumo
This paper reports an extension on the application of the DC method for the estimation of self-heating effects from planar to FinFET devices, verified through theoretical considerations and numerical simulations. In the worst case, a difference of 5.6% was observed on the estimation of the transistors channel temperature when compared to a traditional method.
Descrição
Palavras-chave
Self-heating effect, FinFET, Semi conductor-On-Insulator
Como citar
2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.