Low-Frequency and Random Telegraph Noise Performance of Ge-Based and III-V Devices on a Si Platform
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Data
2016-01-01
Autores
Claeys, Cor
Agopian, Paula [UNESP]
Alian, AliRezza
Arimura, Hiroaki
Fangs, Wen
Martino, Joao
Mitard, Jerome
Neves, Felipe
Oliviera, Alberto
Simoen, Eddy
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Ieee
Resumo
This review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III-V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.
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2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 288-293, 2016.