Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
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Data
2017-01-01
Autores
Oliveira, A. V.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Simoen, E.
Mitard, J.
Witters, L.
Collaert, N.
Claeys, C.
IEEE
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Editor
Ieee
Resumo
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.
Descrição
Palavras-chave
FinFET, germanium channel, low temperature, I-ON/I-OFF ratio, relaxed, strained
Como citar
2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.