Double gate tunnel-FET working like a permittivity based biosensor with different drain to gate and drain to biomaterial alignments
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The goal of this work is to analyze the effect of the drain to gate and to biomaterial alignments on n-type Tunnel-FET (nTFET) working like a permittivity based biosensor. The biomaterial over the drain and channel region influence through the different dielectric permittivity material (k, where ε = k∗ε0) in the sensing area. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices (Bio-TFET) for transistors with the drain to gate underlap (LUD) of 27 nm and with minimum drain to biomaterial overlap (Lover = 0) region.