Now showing items 1-3 of 3
Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET
(Materials Research-ibero-american Journal Of Materials, 2014-11-01) [Artigo]
Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO2/Al2O3 is tested concerning its use as a transparent insulating layer for use in FETs. ...
Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation
(Journal of Electronic Materials, 2010-08-01) [Artigo]
The natural n-type conduction of tin dioxide (SnO2) may be compensated by trivalent rare-earth doping. In this work, SnO2 thin films doped with Eu3+ have been deposited by the sol-gel dip-coating (SGDC) process, topped by ...
Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating
(Thin Solid Films, 2008-11-28) [Artigo]
This paper reports the electrical effects of the incorporation of Ce(III) or Ce(IV) in SnO2 thin films, prepared by the sol-gel-dip-coating technique. This doping has drastically increased the resistivity compared to undoped ...