Show simple item record

dc.contributor.authorPineiz, Tatiane F. [UNESP]
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.authorSaeki, Margarida Juri [UNESP]
dc.contributor.authorde Morais, Evandro A.
dc.date.accessioned2014-05-20T13:53:28Z
dc.date.available2014-05-20T13:53:28Z
dc.date.issued2010-08-01
dc.identifierhttp://dx.doi.org/10.1007/s11664-010-1161-0
dc.identifier.citationJournal of Electronic Materials. New York: Springer, v. 39, n. 8, p. 1170-1176, 2010.
dc.identifier.issn0361-5235
dc.identifier.urihttp://hdl.handle.net/11449/19082
dc.description.abstractThe natural n-type conduction of tin dioxide (SnO2) may be compensated by trivalent rare-earth doping. In this work, SnO2 thin films doped with Eu3+ have been deposited by the sol-gel dip-coating (SGDC) process, topped by a GaAs layer deposited by the resistive evaporation technique. The goal is the combination of a very efficient rare-earth emitting matrix with a high-mobility semiconductor. The x-ray diffraction pattern of SnO2:Eu/GaAs heterojunctions showed simultaneously the crystallographic plane characteristics of GaAs as well as cassiterite SnO2 structure. The electric resistance of the heterojunction device is much lower than the resistance of the SnO2:2 at.%Eu and GaAs films considered separately. Micrographs obtained by scanning electron microscopy (SEM) of the cross-section showed that the interface is clearly identified, exhibiting good adherence and uniformity. A possible explanation for the low resistivity of the SnO2:2 at.%Eu/GaAs heterojunction is the formation of small channels with two-dimensional electron gas (2DEG) behavior.en
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipPró-Reitoria de Pesquisa da UNESP (PROPe UNESP)
dc.format.extent1170-1176
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofJournal of Electronic Materials
dc.sourceWeb of Science
dc.subjectTin dioxideen
dc.subjectgallium arsenideen
dc.subjectheterojunctionen
dc.subjecteuropiumen
dc.titleInterface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporationen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversidade Federal de Minas Gerais (UFMG)
dc.description.affiliationSão Paulo State Univ, Dept Phys, FC, UNESP, Bauru, SP, Brazil
dc.description.affiliationSão Paulo State Univ, UNESP, Dept Chem & Biochem, Botucatu, SP, Brazil
dc.description.affiliationUniversidade Federal de Minas Gerais (UFMG), Dept Phys, Belo Horizonte, MG, Brazil
dc.description.affiliationUnespSão Paulo State Univ, Dept Phys, FC, UNESP, Bauru, SP, Brazil
dc.description.affiliationUnespSão Paulo State Univ, UNESP, Dept Chem & Biochem, Botucatu, SP, Brazil
dc.identifier.doi10.1007/s11664-010-1161-0
dc.identifier.wosWOS:000279504900008
dc.rights.accessRightsAcesso restrito
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Biociências, Botucatupt
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
unesp.author.lattes1802982806436894
unesp.author.lattes7730719476451232[2]
unesp.author.orcid0000-0001-5762-6424[2]
dc.relation.ispartofjcr1.566
dc.relation.ispartofsjr0,474
Localize o texto completo

Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record