Multi-layers lateral SOI PIN photodiodes for solar cells applications
Nenhuma Miniatura disponível
Data
2019-08-01
Autores
Da Silva, F. A. [UNESP]
Doria, R. T.
De Andrade, M. G.C. [UNESP]
Título da Revista
ISSN da Revista
Título de Volume
Editor
Resumo
In this paper, a lateral PIN photodiode based on a SOI wafer has been studied through numerical simulations. This device can be used as a solar cell embedded in a CMOS circuit in order to propose autonomous ultralow-power circuits (ULP). Efficiency behavior has been analyzed for different semiconductor materials and configurations in order to reach the best performance. The results indicate that a layer with a different semiconductor, with different characteristics such as forbidden band, mobility and light absorption, improves the generated power in the device, suggesting that the cell can feed circuits that need larger power.
Descrição
Palavras-chave
Germanium, Multi-layer, PIN photodiode, Solar cells
Como citar
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.