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dc.contributor.authorCanales, Bruno G. [UNESP]
dc.contributor.authorCarmo, Genilson J. [UNESP]
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.date.accessioned2022-04-28T19:51:49Z
dc.date.available2022-04-28T19:51:49Z
dc.date.issued2021-01-01
dc.identifierhttp://dx.doi.org/10.1109/SBMicro50945.2021.9585769
dc.identifier.citationSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices.
dc.identifier.urihttp://hdl.handle.net/11449/223616
dc.description.abstractIn this work, an Al2O3/AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its conduction mechanisms is carried out considering different gate to source and gate to drain distances, as well as different source and drain contact depths. The devices can have up to 3 conduction channels, of which two of them are related to the 2DEG formation and one of them depends on field effect on MOS structure. While the HEMT conduction is more influenced by the source and drain contacts depth, the MOS conduction seems to be more affected by the gate to source and gate to drain distances. Each of these conductions influence the total drain current in a different way.en
dc.language.isoeng
dc.relation.ispartofSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices
dc.sourceScopus
dc.subject2deg
dc.subjectAlgan
dc.subjectAln
dc.subjectDouble conduction mechanisms
dc.subjectMoshemt
dc.titleThe conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurationsen
dc.typeTrabalho apresentado em evento
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.description.affiliationSao Paulo State University Unesp, Sao Joao da Boa Vista
dc.description.affiliationUnespSao Paulo State University Unesp, Sao Joao da Boa Vista
dc.identifier.doi10.1109/SBMicro50945.2021.9585769
dc.identifier.scopus2-s2.0-85126126900
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