Universal zero-bias conductance for the single-electron transistor
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2009-12-16
Autores
Yoshida, M. [UNESP]
Seridonio, A. C.
Oliveira, L. N.
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The thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared. © 2009 The American Physical Society.
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Physical Review B - Condensed Matter and Materials Physics, v. 80, n. 23, 2009.