Now showing items 1-3 of 3
SrBi2(Ta0.5Nb0.5)(2)O-9 : W thin films obtained by chemical solution deposition: Morphological and ferroelectric characteristics
(Journal of Alloys and Compounds, 2008-08-11) [Artigo]
The effect of tungsten (W6+) ion substituting on dielectric and ferroelectric behavior in SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films prepared by polymeric precursor method was investigated at room temperature. The addition ...
Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route
(Journal of Sol-Gel Science and Technology, 2007-12-01) [Artigo]
Bi0.92La0.08FeO3 (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air ...
Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method
(Materials Chemistry and Physics, 2007-10-15) [Artigo]
Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. ...