Now showing items 1-3 of 3
Leakage current behavior of Bi3.25La0.75Ti3O12 ferroelectric thin films deposited on different bottom electrodes
(Materials Chemistry and Physics, 2008-01-15) [Artigo]
Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3 (LNO), RuO2 (RuO2) and La0.5Sr0.5CoO3 (LSCO) bottom electrodes by using the polymeric precursor method and microwave furnace. The bottom electrode is found to be an ...
Dielectric properties of pure and lanthanum modified bismuth titanate thin films
(Journal of Alloys and Compounds, 2008-04-24) [Artigo]
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a ...
Structural and electrical properties of SrBi2(Ta0.5Nb0.5)(2)O-9 thin films
(Journal of Alloys and Compounds, 2008-06-30) [Artigo]
SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 degrees C for 2 h in static air. Crystallinity ...