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Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
(2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s), 2016-01-01) [Trabalho apresentado em evento]
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount ...