Now showing items 1-2 of 2
Back gate bias influence on SOI Omega-gate nanowire down to 10 nm width
(2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s), 2016-01-01) [Trabalho apresentado em evento]
We investigate for the first time the influence of the back gate bias (V-B) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(2016 31st Symposium On Microelectronics Technology And Devices (sbmicro), 2016-01-01) [Trabalho apresentado em evento]
In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...