Now showing items 1-1 of 1
Proton Radiation Influence on SOI FinFET Trade-Off between Transistor Efficiency and Unit Gain Frequency
(2016 31st Symposium On Microelectronics Technology And Devices (sbmicro), 2016-01-01) [Trabalho apresentado em evento]
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...