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dc.contributor.authorKostov, Konstantin G.
dc.contributor.authorBarroso, Joaquim J.
dc.date.accessioned2014-05-20T15:21:04Z
dc.date.available2014-05-20T15:21:04Z
dc.date.issued2006-08-01
dc.identifierhttp://dx.doi.org/10.1109/TPS.2006.878390
dc.identifier.citationIEEE Transactions on Plasma Science. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 34, n. 4, p. 1127-1135, 2006.
dc.identifier.issn0093-3813
dc.identifier.urihttp://hdl.handle.net/11449/32257
dc.description.abstractRecent studies have demonstrated that the sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field. In this paper, a two-dimensional computer simulation of a magnetic-field-enhanced PHI system is described. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform molecular nitrogen plasma. A static magnetic field is created by a small coil installed inside the target holder. The vacuum chamber is filled with background nitrogen gas to form a plasma in which collisions of electrons and neutrals are simulated by the Monte Carlo algorithm. It is found that a high-density plasma is formed around the target due to the intense background gas ionization by the magnetized electrons drifting in the crossed E x B fields. The effect of the magnetic field intensity, the target bias, and the gas pressure on the sheath dynamics and implantation current of the PHI system is investigated.en
dc.format.extent1127-1135
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofIEEE Transactions on Plasma Science
dc.sourceWeb of Science
dc.subjection implantationpt
dc.subjectmagnetic field effectspt
dc.subjectplasma materials processing applicationspt
dc.subjectplasma sheathspt
dc.titleNumerical simulation of magnetic-field-enhanced plasma immersion ion implantation in cylindrical geometryen
dc.typeArtigo
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIEEE-Inst Electrical Electronics Engineers Inc
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionInstituto Nacional de Pesquisas Espaciais (INPE)
dc.description.affiliationState Univ São Paulo, Fac Engn, BR-12516410 Guaratingueta, Brazil
dc.description.affiliationNatl Inst Space Res, Associated Lab Plasma, BR-12227010 Sao Jose Dos Campos, Brazil
dc.description.affiliationUnespState Univ São Paulo, Fac Engn, BR-12516410 Guaratingueta, Brazil
dc.identifier.doi10.1109/TPS.2006.878390
dc.identifier.wosWOS:000239975900015
dc.rights.accessRightsAcesso restrito
unesp.author.orcid0000-0002-6635-6638[2]
unesp.author.orcid0000-0002-9821-8088[1]
dc.relation.ispartofjcr1.253
dc.relation.ispartofsjr0,522
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