Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

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Data

2003-11-24

Autores

Escote, M. T.
Pontes, F. M.
Leite, E. R.
Varela, José Arana [UNESP]
Jardim, R. F.
Longo, Elson [UNESP]

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Editor

Elsevier B.V.

Resumo

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

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thin films, electrical properties, chemical solution deposition, atomic force microscopy (AFM)

Como citar

Thin Solid Films. Lausanne: Elsevier B.V. Sa, v. 445, n. 1, p. 54-58, 2003.