Optical recording in Se(Te)/As2S3 multilayers
Data de publicação2006-04-01
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The development of Te containing nanoscaled, compositionally modulated Te/As2S3 multilayer structures enables the realisation of optical recording in real time with a CW He-Ne laser illumination (lambda=633 nm) with improved recording parameters in comparison with known Se/As2S3 structures. It is established that the efficiency of the recording process depends on the light stimulated interdiffusion and thickness of sub-layers.