Sol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m application

Imagem de Miniatura

Data

2002-07-01

Autores

Goncalves, R. R.
Carturan, G.
Zampedri, L.
Ferrari, M.
Montagna, M.
Chiasera, A.
Righini, G. C.
Pelli, S.
Ribeiro, SJL
Messaddeq, Younes [UNESP]

Título da Revista

ISSN da Revista

Título de Volume

Editor

American Institute of Physics (AIP)

Resumo

70SiO(2)-30HfO(2) planar waveguides, doped with Er(3+) concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the (4)I(13/2)-->(4)I(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The (4)I(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.

Descrição

Palavras-chave

Como citar

Applied Physics Letters. Melville: Amer Inst Physics, v. 81, n. 1, p. 28-30, 2002.