Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

Nenhuma Miniatura disponível

Data

2003-05-01

Autores

Noriega, O. C.
Tabata, A.
Soares, JANT
Rodrigues, SCP
Leite, JR
Ribeiro, E.
Fernandez, JRL
Meneses, E. A.
Cerdeira, F.
As, D. J.

Título da Revista

ISSN da Revista

Título de Volume

Editor

Elsevier B.V.

Resumo

The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Descrição

Palavras-chave

photoluminescence, photoreflectance, molecular beam epitaxy, GaN

Como citar

Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 252, n. 1-3, p. 208-212, 2003.

Coleções