Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
Nenhuma Miniatura disponível
Data
2003-05-01
Autores
Noriega, O. C.
Tabata, A.
Soares, JANT
Rodrigues, SCP
Leite, JR
Ribeiro, E.
Fernandez, JRL
Meneses, E. A.
Cerdeira, F.
As, D. J.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Elsevier B.V.
Resumo
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.
Descrição
Palavras-chave
photoluminescence, photoreflectance, molecular beam epitaxy, GaN
Como citar
Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 252, n. 1-3, p. 208-212, 2003.