Hybrid reflections in InGaP/GaAs(001) by synchrotron radiation multiple diffraction
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2009-03-01
Autores
de Menezes, Alan S.
dos Santos, Adenilson O.
Almeida, Juliana M. A.
Bortoleto, Jose R. R. [UNESP]
Cotta, Monica A.
Morelhao, Sergio L.
Cardoso, Lisandro P.
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Wiley-v C H Verlag Gmbh
Resumo
Hybrid reflections (HRs) involving substrate and layer planes (SL type) [Morelhao et al., Appl. Phys. Len. 73 (15), 2194 (1998)] observed in Chemical Beam Epitaxy (CBE) grown InGaP/GaAs(001) structures were used as a three-dimensional probe to analyze structural properties of epitaxial layers. A set of (002) rocking curves (omega-scan) measured for each 15 degrees in the azimuthal plane was arranged in a pole diagram in phi for two samples with different layer thicknesses (#A -58 nm and #B - 370 nm) and this allowed us to infer the azimuthal epilayer homogeneity in both samples. Also, it was shown the occurrence of (1 (1) over bar3) HR detected even in the thinner layer sample. Mappings of the HR diffraction condition (omega:phi) allowed to observe the crystal truncation rod through the elongation of HR shape along the substrate secondary reflection streak which can indicate in-plane match of layer/substrate lattice parameters. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Physica Status Solidi B-basic Solid State Physics. Weinheim: Wiley-v C H Verlag Gmbh, v. 246, n. 3, p. 544-547, 2009.