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dc.contributor.authorCavalcante, L. S.
dc.contributor.authorSczancoski, J. C.
dc.contributor.authorVicente, Fábio Simões de [UNESP]
dc.contributor.authorFrabbro, M. T.
dc.contributor.authorLi, M. Siu
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.date.accessioned2014-05-20T15:31:06Z
dc.date.available2014-05-20T15:31:06Z
dc.date.issued2009-01-01
dc.identifierhttp://dx.doi.org/10.1007/s10971-008-1841-x
dc.identifier.citationJournal of Sol-gel Science and Technology. Dordrecht: Springer, v. 49, n. 1, p. 35-46, 2009.
dc.identifier.issn0928-0707
dc.identifier.urihttp://hdl.handle.net/11449/40333
dc.description.abstractBa[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet-visible (UV-vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 A degrees C were approximately 148 and 0.08 at 1 MHz, respectively. UV-vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.en
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent35-46
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofJournal of Sol-Gel Science and Technology
dc.sourceWeb of Science
dc.subjectMicrostructureen
dc.subjectDielectricen
dc.subjectOptical band gapen
dc.subjectPhotoluminescenceen
dc.subjectBZT thin filmsen
dc.titleMicrostructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.description.affiliationDQ UFSCar, LIEC, BR-13565905 São Carlos, SP, Brazil
dc.description.affiliationUSP, Inst Fis São Carlos, BR-13560970 São Carlos, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, IQ, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, IQ, BR-14801907 Araraquara, SP, Brazil
dc.identifier.doi10.1007/s10971-008-1841-x
dc.identifier.wosWOS:000261958100006
dc.rights.accessRightsAcesso restrito
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Geociências e Ciências Exatas, Rio Claropt
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
dc.relation.ispartofjcr1.745
dc.relation.ispartofsjr0,477
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