Electrical properties of the SnO2-based varistor
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Data
1998-12-01
Autores
Pianaro, S. A.
Bueno, Paulo Roberto [UNESP]
Olivi, P.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
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Resumo
The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.
Descrição
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Ceramic materials, Crystal defects, Crystal microstructure, Electric conductivity, Electric field effects, Electric properties, Electron tunneling, Grain boundaries, Mathematical models, Scanning electron microscopy, Semiconducting tin compounds, X ray diffraction analysis, Cobalt compounds, Doping (additives), Niobium compounds, Phase composition, Thermionic emission, Tin compounds, Atomic defect model, Nonlinear electrical properties, Schottky double barrier formation, Voltage barrier, Double barrier formation, Electric conduction mechanism, Tin dioxide, Varistors
Como citar
Journal of Materials Science: Materials in Electronics, v. 9, n. 2, p. 159-165, 1998.