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dc.contributor.authorPianaro, S. A.
dc.contributor.authorBueno, Paulo Roberto [UNESP]
dc.contributor.authorOlivi, P.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.date.accessioned2014-05-27T11:19:38Z
dc.date.available2014-05-27T11:19:38Z
dc.date.issued1998-12-01
dc.identifierhttp://dx.doi.org/10.1023/A:1008821808693
dc.identifier.citationJournal of Materials Science: Materials in Electronics, v. 9, n. 2, p. 159-165, 1998.
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11449/65576
dc.description.abstractThe non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.en
dc.format.extent159-165
dc.language.isoeng
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.sourceScopus
dc.subjectCeramic materials
dc.subjectCrystal defects
dc.subjectCrystal microstructure
dc.subjectElectric conductivity
dc.subjectElectric field effects
dc.subjectElectric properties
dc.subjectElectron tunneling
dc.subjectGrain boundaries
dc.subjectMathematical models
dc.subjectScanning electron microscopy
dc.subjectSemiconducting tin compounds
dc.subjectX ray diffraction analysis
dc.subjectCobalt compounds
dc.subjectDoping (additives)
dc.subjectNiobium compounds
dc.subjectPhase composition
dc.subjectThermionic emission
dc.subjectTin compounds
dc.subjectAtomic defect model
dc.subjectNonlinear electrical properties
dc.subjectSchottky double barrier formation
dc.subjectVoltage barrier
dc.subjectDouble barrier formation
dc.subjectElectric conduction mechanism
dc.subjectTin dioxide
dc.subjectVaristors
dc.titleElectrical properties of the SnO2-based varistoren
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights
dc.contributor.institutionUniversidade Estadual de Ponta Grossa (UEPG)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.description.affiliationDepto. de Engenharia de Materiais UEPG, 84031-510, Ponta Grossa, PR
dc.description.affiliationDepartamento de Química Univ. Federal de São Carlos, PO Box 676, 13565-905, São Carlos, SP
dc.description.affiliationInstituto de Química Universidade Estadual Paulista, PO Box 355, 14800-905 Araraquara, SP
dc.description.affiliationUnespInstituto de Química Universidade Estadual Paulista, PO Box 355, 14800-905 Araraquara, SP
dc.identifier.doi10.1023/A:1008821808693
dc.identifier.wosWOS:000072708700012
dc.rights.accessRightsAcesso restrito
dc.identifier.scopus2-s2.0-0032045617
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
dc.identifier.lattes0477045906733254
dc.identifier.orcid0000-0003-2827-0208
unesp.author.lattes0477045906733254[2]
unesp.author.orcid0000-0003-2827-0208[2]
dc.relation.ispartofjcr2.324
dc.relation.ispartofsjr0,503
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