Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals
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Data
2009-09-14
Autores
Preto, André Oliveira [UNESP]
Barbosa, Eduardo Acedo [UNESP]
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Resumo
We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated. © 2009 SPIE.
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Holographic profilometry, Photorefractive crystals, Beam angle, Branch-cut method, Diode lasers, Fringe visibilities, Holographic images, Object surface, Phase mappings, Phase unwrapping, Photo-refractive, Semiconductor components, Shape measurements, Synthetic wavelength, TiO, Acoustic wave refraction, Crystals, Holographic interferometry, Holography, Integrated circuits, Lasers, Light, Optical data processing, Optical testing, Optical variables measurement, Photoreactivity, Profilometry, Semiconductor lasers, Tuning
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Proceedings of SPIE - The International Society for Optical Engineering, v. 7389.