Now showing items 1-2 of 2
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2
(Materials Research-ibero-american Journal of Materials, 2013-07-01) [Artigo]
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built ...
Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation
(Journal of Electronic Materials, 2010-08-01) [Artigo]
The natural n-type conduction of tin dioxide (SnO2) may be compensated by trivalent rare-earth doping. In this work, SnO2 thin films doped with Eu3+ have been deposited by the sol-gel dip-coating (SGDC) process, topped by ...