Now showing items 1-3 of 3
Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity
(Materials Chemistry and Physics, 2012-06-15) [Artigo]
Lightly Eu3+-doped (0.05%) SnO2 thin films are deposited by the sol-gel-dip-coating technique, topped by alternative metallic layers of Al, Sn or In, arranged in a parallel layout on the thin film surface, and deposited ...
Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3
(Journal of Materials Science, 2011-10-01) [Artigo]
Aiming for the investigation of insulating properties of aluminum oxide (Al2O3) layers, as well as the combination of this oxide with tin dioxide (SnO2) for application in transparent field effect transistors, Al thin films ...
Preparation of TiO2/SnO2 Thin Films by Sol-Gel Method and Periodic B3LYP Simulations
(Journal Of Physical Chemistry A, 2014-08-07) [Artigo]
Titanium dioxide (TiO2) thin films are grown by the sol-gel dip-coating technique, in conjunction with SnO2 in the form of a heterostructure. It was found that the crystalline structure of the most internal layer (TiO2) ...