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Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2
(Materials Research-ibero-american Journal of Materials, 2013-07-01) [Artigo]
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built ...