Now showing items 1-4 of 4
Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation
(Journal of Electronic Materials, 2010-08-01) [Artigo]
The natural n-type conduction of tin dioxide (SnO2) may be compensated by trivalent rare-earth doping. In this work, SnO2 thin films doped with Eu3+ have been deposited by the sol-gel dip-coating (SGDC) process, topped by ...
Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2
(Electroceramics Vi, 2014-01-01) [Trabalho apresentado em evento]
TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited ...
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
(AIP Conference Proceedings, 2008-05-21) [Trabalho apresentado em evento]
Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the ...
Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating
(Thin Solid Films, 2008-11-28) [Artigo]
This paper reports the electrical effects of the incorporation of Ce(III) or Ce(IV) in SnO2 thin films, prepared by the sol-gel-dip-coating technique. This doping has drastically increased the resistivity compared to undoped ...