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dc.contributor.authorGeraldo, V. [UNESP]
dc.contributor.authorBriois, V.
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.authorSantilli, C. V. [UNESP]
dc.date.accessioned2014-05-20T13:26:22Z
dc.date.available2014-05-20T13:26:22Z
dc.date.issued2010-11-18
dc.identifierhttp://dx.doi.org/10.1021/jp106001x
dc.identifier.citationJournal of Physical Chemistry C. Washington: Amer Chemical Soc, v. 114, n. 45, p. 19206-19213, 2010.
dc.identifier.issn1932-7447
dc.identifier.urihttp://hdl.handle.net/11449/8493
dc.description.abstractMultiedge XAS data are presented for Sb-doped SnO2 xerogels dried at 200 degrees C and fired at 550 degrees C, aiming to determine the location of antimony doping in the host matrix and then to understand the role that the intentional impurity plays in the structure and properties of the tin oxide based materials. Xerogel processing at 200 degrees C leads to the original trivalent antimony, used for the xerogel preparation to the Sb-v oxidation state, mainly for low doping levels ([Sb] <= 4 atom %). As the doping level increases, a significant amount of antimony remains in the trivalent oxidation state. Upon firing at 550 degrees C, the antimony is present mainly as Sb-v, independent of the doping level. The analysis of EXAFS data recorded at the Sn and Sb K edges leads to the conclusion that doping with Sb for a level of less than 4 atom % favors crystallite growth, concomitant with a strong dominance of the Sb-v oxidation state. Besides, the pentavalent antimony is located at internal sites of the SnO2 nanocrystallites. The EXAFS spectra of the higher ([Sb] > 4 atom %) doped samples can always be fitted by a linear combination of the spectra corresponding to the Sbv site in solid solution and the spectra corresponding to the sample where Sb-III is chemically grafted at the surface of the SnO2 crystallite. This Sb-III segregation also agrees with the low electrical conductivity reported for sol-gel deposited films, because it generates a barrier at the grain boundary, inducing a very high electron scattering and, thus, a low electron mobility.en
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipPró-Reitoria de Pesquisa da UNESP (PROPe UNESP)
dc.description.sponsorshipDESY
dc.description.sponsorshipEuropean Community
dc.format.extent19206-19213
dc.language.isoeng
dc.publisherAmer Chemical Soc
dc.relation.ispartofJournal of Physical Chemistry C
dc.sourceWeb of Science
dc.titleStructural Characterization of Nanocrystalline Sb-Doped SnO2 Xerogels by Multiedge X-ray Absorption Spectroscopyen
dc.typeArtigo
dcterms.licensehttp://pubs.acs.org/page/copyright/journals/faqs.html
dcterms.rightsHolderAmer Chemical Soc
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversidade Federal de Minas Gerais (UFMG)
dc.contributor.institutionSynchrotron SOLEIL
dc.description.affiliationUNESP, Dept Fis FC, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUniversidade Federal de Minas Gerais (UFMG), Lab Nanomat, Belo Horizonte, MG, Brazil
dc.description.affiliationSynchrotron SOLEIL, F-91192 Gif Sur Yvette, France
dc.description.affiliationUNESP, Inst Quim, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Dept Fis FC, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801907 Araraquara, SP, Brazil
dc.identifier.doi10.1021/jp106001x
dc.identifier.wosWOS:000284018100008
dc.rights.accessRightsAcesso restrito
dc.description.sponsorshipIdDESY: RII3-CT-2004-50600
dc.description.sponsorshipIdEuropean Community: RII3-CT-2004-50600
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
dc.identifier.lattes7730719476451232
unesp.author.lattes7730719476451232[3]
unesp.author.orcid0000-0001-5762-6424[3]
dc.relation.ispartofjcr4.484
dc.relation.ispartofsjr2,135
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