Coherent properties and Rabi oscillations in two-level donor systems
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Data
2006-06-01
Autores
Latge, A.
Ribeiro, F. J.
Bruno-Alfonso, A.
Oliveira, L. E.
Brandi, H. S.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Sociedade Brasileira Fisica
Resumo
Coherent properties and Rabi oscillations in two-level donor systems, under terahertz excitation, are theoretically investigated. Here we are concerned with donor states in bulk GaAs and GaAs-(Ga,Al)As quantum dots. We study confinement effects, in the presence of an applied magnetic field, on the electronic and on-center donor states in GaAs- (Ga,Al)As dots, as compared to the situation in bulk GaAs, and estimate some of the associated decay rate parameters. Using the optical Bloch equations with damping, we study the time evolution of the Is and 2p(+) states in the presence of an applied magnetic field and of a terahertz laser. We also discuss the role played by the distinct dephasing rates on the photocurrent and calculate the electric dipole transition moment. Results indicate that the Rabi oscillations are more robust as the total dephasing rate diminishes, corresponding to a favorable coherence time.
Descrição
Palavras-chave
coherent properties, Rabi oscillations, two-level donor systems
Como citar
Brazilian Journal of Physics. São Paulo: Sociedade Brasileira Fisica, v. 36, n. 2A, p. 419-422, 2006.