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Photo-induced electron trapping in indirect bandgap AlxGa1-xAs : Si at low temperature
(Journal of Physics: Condensed Matter, 1999-01-18) [Artigo]
A variation of photoconductivity excitation with wavelength is applied to Si-doped Al0.56Ga0.44As (indirect bandgap material) for a wide range of temperature. The lower the temperature the lower the photocurrent below 70 ...