Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

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2014-01-01

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Coorientador

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Trans Tech Publications Ltd

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Trabalho apresentado em evento

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Resumo

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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Inglês

Como citar

Electroceramics Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 975, p. 248-253, 2014.

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