Numerical simulation of magnetic-field-enhanced plasma immersion ion implantation in cylindrical geometry

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2006-08-01

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Institute of Electrical and Electronics Engineers (IEEE)

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Recent studies have demonstrated that the sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field. In this paper, a two-dimensional computer simulation of a magnetic-field-enhanced PHI system is described. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform molecular nitrogen plasma. A static magnetic field is created by a small coil installed inside the target holder. The vacuum chamber is filled with background nitrogen gas to form a plasma in which collisions of electrons and neutrals are simulated by the Monte Carlo algorithm. It is found that a high-density plasma is formed around the target due to the intense background gas ionization by the magnetized electrons drifting in the crossed E x B fields. The effect of the magnetic field intensity, the target bias, and the gas pressure on the sheath dynamics and implantation current of the PHI system is investigated.

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Inglês

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IEEE Transactions on Plasma Science. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 34, n. 4, p. 1127-1135, 2006.

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