Processing of BiFeO3 thin films to control their dielectric response

dc.contributor.authorReis, S. P. [UNESP]
dc.contributor.authorFreitas, F. E. [UNESP]
dc.contributor.authorAraujo, E. B. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionFed Inst Educ Sci & Technol Sao Paulo
dc.contributor.institutionUniv Rio Verde UniRV
dc.date.accessioned2020-12-10T20:00:45Z
dc.date.available2020-12-10T20:00:45Z
dc.date.issued2020-05-18
dc.description.abstractBiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones.en
dc.description.affiliationSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, Brazil
dc.description.affiliationFed Inst Educ Sci & Technol Sao Paulo, Votuporanga, Brazil
dc.description.affiliationUniv Rio Verde UniRV, Rio Verde, Brazil
dc.description.affiliationUnespSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipIdFAPESP: 2017/13769-1
dc.description.sponsorshipIdCNPq: 304604/2015-1
dc.description.sponsorshipIdCAPES: 88887.310512/2018-00
dc.format.extent61-69
dc.identifierhttp://dx.doi.org/10.1080/00150193.2020.1722884
dc.identifier.citationFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 560, n. 1, p. 61-69, 2020.
dc.identifier.doi10.1080/00150193.2020.1722884
dc.identifier.issn0015-0193
dc.identifier.urihttp://hdl.handle.net/11449/196929
dc.identifier.wosWOS:000536970900010
dc.language.isoeng
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofFerroelectrics
dc.sourceWeb of Science
dc.subjectConductivity
dc.subjectdielectric relaxation
dc.subjectbismuth ferrite
dc.subjectthin films
dc.titleProcessing of BiFeO3 thin films to control their dielectric responseen
dc.typeArtigo
dcterms.licensehttp://journalauthors.tandf.co.uk/permissions/reusingOwnWork.asp
dcterms.rightsHolderTaylor & Francis Ltd

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