Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode

Carregando...
Imagem de Miniatura

Data

2017-11-01

Orientador

Coorientador

Pós-graduação

Curso de graduação

Título da Revista

ISSN da Revista

Título de Volume

Editor

Tipo

Artigo

Direito de acesso

Acesso abertoAcesso Aberto

Resumo

We report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm2 and on/off ratio of 5 × 103 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics.

Descrição

Idioma

Inglês

Como citar

Organic Electronics: physics, materials, applications, v. 50, p. 311-316.

Itens relacionados