Influence of the rare-earths oxides doped on the SnO2CoOMnO2Ta2O5 varistor system

Nenhuma Miniatura disponível

Data

2002-09-01

Orientador

Coorientador

Pós-graduação

Curso de graduação

Título da Revista

ISSN da Revista

Título de Volume

Editor

Kluwer Academic Publ

Tipo

Artigo

Direito de acesso

Acesso restrito

Resumo

The tin dioxide is an n-type semiconductor, which exhibits varistor behavior with high capacity of absorption of energy, whose function is to restrict transitory over-voltages without being destroyed, when it is doped with some oxides. Varistors are used in alternated current fields as well as in continuous current, and it can be applied in great interval of voltages or in great interval of currents. The electric properties of the varistor depend on the defects that happen at the grain boundaries and the adsorption of oxygen. The (98.90-x)%SnO2.0.25%CoO+0.75%MnO2+0.05%Ta2O5+0.05%Tr2O3 systems, in which Tr=La or Nd. Current-voltage measurements were accomplished for determination of the non-linear coefficient were studied. SEM microstructure analysis was made to evaluate the microstructural characteristics of the systems. The results showed that the rare-earth oxides have influenced the electrical behavior presented by the system. (C) 2002 Kluwer Academic Publishers.

Descrição

Palavras-chave

Idioma

Inglês

Como citar

Journal of Materials Science-materials In Electronics. Dordrecht: Kluwer Academic Publ, v. 13, n. 9, p. 567-570, 2002.

Itens relacionados

Financiadores