Simoes, A. Z.Riccardi, C. S.Quinelato, C.Ries, A.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202004-11-15Materials Science and Engineering B-solid State Materials For Advanced Technology. Lausanne: Elsevier B.V. Sa, v. 113, n. 3, p. 207-214, 2004.0921-5107http://hdl.handle.net/11449/33721Pure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC for 2 h. Crystallinity and morphological evaluation were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystalline layer route present a dense microstructure with spherical grains. Films obtained using the intermediate-amorphous layer, present elongated grains around 250 nm in size. The dielectric and ferroelectric properties of the lanthanum-doped Bi4Ti3O12 films are strongly affected by the crystallization route. The hysteresis loops are fully saturated with a remnant polarization and drive voltage of the films, heat-treated by the intermediate-crystalline (P-r = 20.2 muC/cm(2) and V = 1.35 V) and for the film heat-treated by amorphous route (P-r = 22.4 muC/cm(2) and V = 2.99 V). (C) 2004 Elsevier B.V. All rights reserved.207-214engceramicselectrical measurementsfilm depositionthin filmsArtigo10.1016/j.mseb.2004.08.004WOS:000224946000006Acesso restrito