Gonçalves, Rogeria R.Carturan, GiovanniZampedri, LucaFerrari, MaurizioMontagna, MaurizioRighini, Giancarlo C.Pelli, StefanoRibeiro, Sidney J.L. [UNESP]Messaddeq, Younes [UNESP]2014-05-272014-05-272003-12-01Proceedings of SPIE - The International Society for Optical Engineering, v. 4829 I, p. 89-90.0277-786Xhttp://hdl.handle.net/11449/6750270SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.89-90engLuminescenceOptical materialsPlanar waveguidesSilica-hafniaSol-gel, dip-coating, erbiumAnnealingBirefringenceDensificationErbiumHafnium compoundsLaser beamsMicrostructureMorphologyPhotoluminescencePhotonsRefractive indexSilicaSol-gelsDip-coatingsEmission bandsOptical waveguidesTrabalho apresentado em evento10.1117/12.524944Acesso aberto2-s2.0-23425290812998503841917815