Regone, N. N.Freire, CMABallester, M.2014-05-202014-05-202006-02-20Journal of Materials Processing Technology. Lausanne: Elsevier B.V. Sa, v. 172, n. 1, p. 146-151, 2006.0924-0136http://hdl.handle.net/11449/31In the present work, the anodic oxide films of Al, Al-Cu 4.5% and Al-Si 6.5% alloys are formed using direct and pulse current. In the case of Al-Cu and Al-Si alloys, the electrolyte used contains sulfuric acid and oxalic acid, meanwhile for Al the electrolyte contains sulfuric acid only. Al-Cu alloy was submitted to a heat treatment in order to decrease the effect of inter metallic phase theta upon the anodic film structure. Fractured samples were observed using a field emission gun scanning electron microscope JSM-6330F at (LME)/Brazilian Synchrotron Light Laboratory (LNLS), Campinas, SP, Brazil. The oxide film images enable evaluation of the pore size and form with a resolution similar to the transmission electron microscope (TEM) resolution. It is also observed that the anodizing process using pulse current produces an irregular structure of pore walls, and by direct cur-rent it is produced a rectilinear pore wall. (c) 2005 Elsevier B.V. All rights reserved.146-151enganodizingfield emission gun microscopyaluminumAl-Cu alloyAl-Si alloyArtigo10.1016/j.jmatprotec.2005.09.005WOS:000235379700019Acesso restrito